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  ? 2012 microchip technology inc. ds25122a-page 1 mcp1703a features: ? reduced ground current during dropout ? faster startup time ? 2.0 a typical quiescent current ? input operating voltage range: 2.7v to16.0v ? 250 ma output current for output voltages 2.5v ? 200 ma output current for output voltages < 2.5v ? low dropout voltage, 625 mv typical @ 250 ma for v r =2.8v ? 0.4% typical output voltage tolerance ? standard output voltage options: - 1.2v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 4.0v, 5.0v ? output voltage range: 1.2v to 5.5v in 0.1v increments (50 mv increments available upon request) ? stable with 1.0 f to 22 f ceramic output capacitance ? short-circuit protection ? overtemperature protection applications: ? battery-powered devices ? battery-powered alarm circuits ? smoke detectors ?co 2 detectors ? pagers and cellular phones ? smart battery packs ? low quiescent current voltage reference ?pdas ?digital cameras ? microcontroller power ? solar-powered instruments ? consumer products related literature: ? an765, ? using microchip?s micropower ldos ?, ds00765, microchip technology inc., 2007 ? an766, ? pin-compatible cmos upgrades to bipolar ldos ?, ds00766, microchip technology inc., 2003 ? an792, ? a method to determine how much power a sot23 can dissipate in an application ?, ds00792, microchip technology inc., 2001 description: the mcp1703a is an improved version of the mcp1703 low dropout (ldo) voltage regulator that can deliver up to 250 ma of current while consuming only 2.0 a of quiescent current (typical). the input operating range is specified from 2.7v to 16.0v, making it an ideal choice for two to six primary cell battery- powered applications, 9v alkaline and one or two cell li-ion-powered applications. the mcp1703a is capable of delivering 250 ma with only 625 mv (typical) of input to output voltage differential (v out = 2.8v). the output voltage tolerance of the mcp1703a is typically 0.4% at +25c and 3% maximum over the operating junction temperature range of -40c to +125c. line regulation is 0.1% typical at +25c. output voltages available for the mcp1703a range from 1.2v to 5.5v. the ldo output is stable when using only 1 f of output capacitance. ceramic, tantalum, or aluminum electrolytic capacitors can all be used for input and output. overcurrent limit and overtemperature shutdown provide a robust solution for any application. package options include the sot-223-3, sot-23a, 2x3 dfn-8, and sot-89-3. package types 1 3 2 v in gnd v out 1 2 3 v in gnd v out sot-23a sot-89 v in 1 2 3 sot-223 gnd v in v out nc nc gnd nc nc 1 2 3 4 8 7 6 5 nc v out ep 9 * includes exposed thermal pad (ep); see ta b l e 3 - 1 . v in 2x3 dfn* 250 ma, 16v, low quiescent current ldo regulator
mcp1703a ds25122a-page 2 ? 2012 microchip technology inc. functional block diagrams typical application circuits + - v in v out gnd +v in error amplifier voltage reference overcurrent overtemperature mcp1703a v in c in 1f ceramic c out 1f ceramic v out v in 3.3v i out 50 ma v in v out 9v battery + gnd mcp1703a
? 2012 microchip technology inc. ds25122a-page 3 mcp1703a 1.0 electrical characteristics absolute maximum ratings ? v dd ..................................................................................+18v all inputs and outputs w.r.t. .............(v ss -0.3v) to (v in +0.3v) peak output current ...................................................500 ma storage temperature .....................................-65c to +150c maximum junction temperature ................................. +150c esd protection on all pins (hbm;mm) ............... 4kv; 400v ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this s pecification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise specified, al l limits are established for v in =v out(max) +v dropout(max) , note 1 , i load = 1 ma, c out = 1 f (x7r), c in = 1 f (x7r), t a = +25c. boldface type applies for junction temperatures, t j ( note 7 ) of -40c to +125c. parameters symbol min typ max units conditions input / output characteristics input operating voltage v in 2.7 ? 16.0 v note 1 input quiescent current i q ?2.0 5 a i l = 0 ma maximum output current i out_ma 250 ? ? ma for v r 2.5v 50 100 ? ma for v r < 2.5v, v in 2.7v 100 130 ? ma for v r < 2.5v, v in 2.95v 150 200 ? ma for v r < 2.5v, v in 3.2v 200 230 ? ma for v r < 2.5v, v in 3.45v output short circuit current i out_sc ? 400 ? ma v in =v in(min) ( note 1 ) , v out =gnd, current (average current) measured 10 ms after short is applied. output voltage regulation v out v r -3.0% v r 0.4% v r +3.0% v note 2 v r -2.0% v r 0.4% v r +2.0% v v r -1.0% v r 0.4% v r +1.0% v 1% custom v out temperature coefficient tcv out ? 65 ? ppm/c note 3 line regulation dv out / (v out x v in ) -0.3 0.1 +0.3 %/v (v out(max) + v dropout(max) ) v in 16v, note 1 load regulation v out /v out -2.5 1.0 +2.5 %i l = 1.0 ma to 250 ma for v r 2.5v i l = 1.0 ma to 200 ma for v r <2.5v v in = 3.65v, note 4 note 1: the minimum v in must meet two conditions: v in 2.7v and v in (v out(max) + v dropout(max) ). 2: v r is the nominal regulator output voltage. for example: v r = 1.2v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 4.0v, or 5.0v. the input voltage v in = v out(max) + v dropout(max) or vi in = 2.7v (whichever is greater); i out = 100 a. 3: tcv out = (v out-high - v out-low )x10 6 /(v r x temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty cycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 2% below its measured value with an applied input voltage of v out(max) + v dropout(max) or 2.7v, whichever is greater. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., t a , t j , q ja ). exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150c rating. sustained junction temperatures above 150c can impact the device reliability. 7: the junction temperature is approximated by soaking the dev ice under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambi- ent temperature is not significant.
mcp1703a ds25122a-page 4 ? 2012 microchip technology inc. dropout voltage note 1 , note 5 v dropout ? 330 650 mv i l = 250 ma, v r = 5.0v ? 525 725 mv i l = 250 ma, 3.3v v r < 5.0v ? 625 975 mv i l = 250 ma, 2.8v v r < 3.3v ? 750 1100 mv i l = 250 ma, 2.5v v r < 2.8v ???mvv r < 2.5v, see maximum output current parameter output delay time t delay ? 600 ? s v in = 0v to 6v, v out = 90% v r , r l = 50 resistive output noise e n ?0.3 v/(hz) 1/2 i l = 50 ma, f = 1 khz, c out = 1 f power supply ripple rejection ratio psrr ? 35 ? db f = 100 hz, c out = 1 f, i l = 10 ma, v inac = 200 mv pk-pk, c in = 0 f, v r =5.0v thermal shutdown protection t sd ? 150 ? c temperature specifications ( 1 ) parameters sym min typ max units conditions temperature ranges operating junction temperature range t j -40 ? +125 c steady state maximum junction temperature t j ? ? +150 c transient storage temperature range t a -65 ? +150 c thermal package resistance ( note 2 ) thermal resistance, 3ld sot-223 ja jc ? ? 62 15 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 3ld sot-23a ja jc ? ? 336 110 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 3ld sot-89 ja jc ? ? 180 52 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 8ld 2x3 dfn ja jc ? ? 70 13.4 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board note 1: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., t a , t j , ja ). exceeding the maximum allowable power dissipation will cause the device operati ng junction temperature to exceed the maximum 150c rating. sustained junction temperatures above 150c c an impact the device reliability. 2: thermal resistance values are subject to change. please visit the microchip web site for the latest packaging information. dc characteristics (continued) electrical specifications: unless otherwise specified, al l limits are established for v in =v out(max) +v dropout(max) , note 1 , i load = 1 ma, c out = 1 f (x7r), c in = 1 f (x7r), t a = +25c. boldface type applies for junction temperatures, t j ( note 7 ) of -40c to +125c. parameters symbol min typ max units conditions note 1: the minimum v in must meet two conditions: v in 2.7v and v in (v out(max) + v dropout(max) ). 2: v r is the nominal regulator output voltage. for example: v r = 1.2v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 4.0v, or 5.0v. the input voltage v in = v out(max) + v dropout(max) or vi in = 2.7v (whichever is greater); i out = 100 a. 3: tcv out = (v out-high - v out-low )x10 6 /(v r x temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty cycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 2% below its measured value with an applied input voltage of v out(max) + v dropout(max) or 2.7v, whichever is greater. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., t a , t j , q ja ). exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150c rating. sustained junction temperatures above 150c c an impact the device reliability. 7: the junction temperature is approximated by soaking the dev ice under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambi- ent temperature is not significant.
? 2012 microchip technology inc. ds25122a-page 5 mcp1703a 2.0 typical performance curves note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), i l = 1 ma, t a = +25c, v in = v out(max) + v dropout(max) or 2.7v, whichever is greater. note: junction temperature (t j ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in junction temperature over the ambient temperature is not signi ficant. figure 2-1: quiescent current vs. input voltage. figure 2-2: quiescent current vs. input voltage. figure 2-3: quiescent current vs. input voltage. figure 2-4: ground current vs. load current. figure 2-5: ground current vs. load current. figure 2-6: quiescent current vs. junction temperature. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.00 1.00 2.00 3.00 4.00 5.00 2 4 6 8 10 12 14 16 quiescent current (a) input voltage (v) v out = 1.2v i out = 0 a +25c +130c -45c 0c +90c 0.00 1.00 2.00 3.00 4.00 5.00 6.00 2 4 6 8 10 12 14 16 quiescent current (a) input voltage (v) v out = 2.5v i out = 0 a +90c +130c - 45c 0c +90c 1 2 3 4 5 6 7 6 8 10 12 14 16 quiescent current (a) input voltage (v) v out = 5.0v i out = 0 a 0c +130c - 45c +25c +90c 0 10 20 30 40 50 60 0 40 80 120 160 200 gnd current (a) load current (ma) v out = 1.2v v in = 2.7v 0 10 20 30 40 50 60 0 50 100 150 200 250 gnd current (a) load current (ma) v out = 2.5v v in = 3.5v v out = 5.0v v in = 6.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -45 -20 5 30 55 80 105 130 quiescent current (a) junction temperature (c) i out = 0 ma v out = 5.0v v in = 6.0v v out = 1.2v v in = 2.7v v out = 2.5v v in = 3.5v
mcp1703a ds25122a-page 6 ? 2012 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), i l = 1 ma, t a = +25c, v in = v out(max) + v dropout(max) or 2.7v, whichever is greater. figure 2-7: output voltage vs. input voltage. figure 2-8: output voltage vs. input voltage. figure 2-9: output voltage vs. input voltage. figure 2-10: output voltage vs. load current. figure 2-11: output voltage vs. load current. figure 2-12: output voltage vs. load current. 1.18 1.19 1.20 1.21 1.22 1.23 1.24 2 4 6 8 10 12 14 16 18 output voltage (v) input voltage (v) v out = 1.2v i load = 1 ma +25c +130c -45c 0c +90c 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2 4 6 8 10 12 14 16 18 output voltage (v) input voltage (v) v out = 2.5v i load = 1 ma +25c +130c -45c 0c +90c 4.88 4.92 4.96 5.00 5.04 5.08 5.12 5.16 6 8 10 12 14 16 18 output voltage (v) input voltage (v) v out = 5.0v i load = 1 ma +25c +130c -45c 0c +90c 1.16 1.17 1.18 1.19 1.20 1.21 1.22 1.23 1.24 0 20 40 60 80 100 120 140 160 180 200 output voltage (v) load current (ma) v in = 3.0v v out = 1.2v +25c +130c -45c 0c +90c 2.46 2.47 2.48 2.49 2.50 2.51 2.52 2.53 2.54 0 50 100 150 200 250 output voltage (v) load current (ma) v in = 3.5v v out = 2.5v +25c +130c -45c 0c +90c 4.92 4.94 4.96 4.98 5.00 5.02 5.04 5.06 0 50 100 150 200 250 output voltage (v) load current (ma) v in = 6v v out = 5.0v +25c +130c -45c 0c +90c
? 2012 microchip technology inc. ds25122a-page 7 mcp1703a note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), i l = 1 ma, t a = +25c, v in = v out(max) + v dropout(max) or 2.7v, whichever is greater. figure 2-13: dropout voltage vs. load current. figure 2-14: dropout voltage vs. load current. figure 2-15: dropout voltage vs. load current. figure 2-16: dynamic line response. figure 2-17: dynamic line response. figure 2-18: short circuit current vs. input voltage. 0.00 0.50 1.00 1.50 2.00 2.50 3.00 0 25 50 75 100 125 150 175 200 225 250 dropout voltage (v) load current (ma) v out = 1.2v 0c, +25c, +90c, +130c - 45c - 45c, 0c 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 25 50 75 100 125 150 175 200 225 250 dropout voltage (v) load current (ma) v out = 2.5v +25c +130c 0c - 45c +90c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 25 50 75 100 125 150 175 200 225 250 dropout voltage (v) load current (ma) v out = 5.0v +25c +130c 0c - 45c +90c -400 -200 0 200 400 600 0 1 2 3 4 5 0 500 1000 1500 2000 2500 output voltage (mvac) input voltage (v) time (s) v out = 2.5v i out = 10 ma v in v out(ac) -600 -400 -200 0 200 400 0 1 2 3 4 5 0 500 1000 1500 2000 2500 output voltage (mvac) input voltage (v) time (s) v out = 2.5v i out = 100 ma v in v out(ac) 0 100 200 300 400 500 600 700 800 024681012141618 short circuit current (ma) input voltage (v) v out = 2.5v r out < 0.1
mcp1703a ds25122a-page 8 ? 2012 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), i l = 1 ma, t a = +25c, v in = v out(max) + v dropout(max) or 2.7v, whichever is greater. figure 2-19: load regulation vs. temperature. figure 2-20: load regulation vs. temperature. figure 2-21: load regulation vs. temperature. figure 2-22: line regulation vs. temperature. figure 2-23: line regulation vs. temperature. figure 2-24: line regulation vs. temperature. -1.00 -0.80 -0.60 -0.40 -0.20 0.00 0.20 0.40 0.60 0.80 1.00 -45 -20 5 30 55 80 105 130 load regulation (%) temperature (c) v out = 1.2v i out = 1 ma to 200 ma v in = 8v v in = 14v v in = 3.45v v in = 5v -1.60 -1.40 -1.20 -1.00 -0.80 -0.60 -0.40 -0.20 0.00 0.20 0.40 0.60 -45 -20 5 30 55 80 105 130 load regulation (%) temperature (c) v out = 2.5v i out = 1 ma to 250 ma v in = 5v v in = 14v v in = 10v v in = 3.65v -1.20 -1.00 -0.80 -0.60 -0.40 -0.20 0.00 0.20 0.40 0.60 0.80 -45 -20 5 30 55 80 105 130 load regulation (%) temperature (c) v out = 5.0v i out = 1 to 250 ma v in = 6v v in = 14v v in = 12v v in = 8v v in = 16v 0.00 0.04 0.08 0.12 0.16 0.20 -45 -20 5 30 55 80 105 130 line regulation (%/v) temperature (c) v in = 3.45 to 16.0v v out = 1.2v 1 ma 100 ma 0 ma 200 ma 250 ma 0.00 0.04 0.08 0.12 0.16 0.20 0.24 -45 -20 5 30 55 80 105 130 line regulation (%/v) temperature (c) v out = 2.5v v in = 3.5v to 16v 100 ma 0 ma 250 ma 0.04 0.08 0.12 0.16 0.20 0.24 -45 -20 5 30 55 80 105 130 line regulation (%/v) temperature (c) v out = 5.0v v in = 6.0v to 16.0v 200 ma 100 ma 0 ma 250 ma
? 2012 microchip technology inc. ds25122a-page 9 mcp1703a note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), i l = 1 ma, t a = +25c, v in = v out(max) + v dropout(max) or 2.7v, whichever is greater. figure 2-25: psrr vs. frequency. figure 2-26: psrr vs. frequency. figure 2-27: psrr vs. frequency. figure 2-28: psrr vs. frequency. figure 2-29: output noise vs. frequency. figure 2-30: power up timing. -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 1.2v v in = 2.9v v inac = 200 mv p-p c in = 0 f i out = 10 ma -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 1.2v v in = 3.7v v inac = 200 mv p-p c in = 0 f i out = 200 ma -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 5.0v v in = 6.2v v inac = 200 mv p-p c in = 0 f i out = 10 ma -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 5.0v v in = 8.5v v inac = 800 mv p-p c in = 0 f i out = 250 ma 10.00 v r =50v v in =60v i out = 50 ma z ) v r =5 . 0v , v in =6 . 0v v r = 2.8v, v in = 3.8v v r = 1.2v, v in = 2.7v 1.00 v/  h z 0.10 n oise ( n 0.01 0.01 0.10 1.00 10.00 100.00 1000.00 frequency (khz) 8 v =25v r =25  6 7 v r =2 . 5v , r load =25  v in = 0v to 5.3v step v in 4 5 t s (v) 2 3 vol t 0 1 2 v out 0 0 200 400 600 800 1000 time (s) time (s)
mcp1703a ds25122a-page 10 ? 2012 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), i l = 1 ma, t a = +25c, v in = v out(max) + v dropout(max) or 2.7v, whichever is greater. figure 2-31: dynamic load response. figure 2-32: dynamic load response. figure 2-33: ground current vs. input voltage. figure 2-34: ground current vs. input voltage. figure 2-35: output voltage vs. input voltage. figure 2-36: dropout current vs. input voltage. 0 5 10 15 20 25 30 -1500 -1000 -500 0 500 1000 1500 0 500 1000 1500 2000 2500 output voltage (mv) time (s) v out = 2.5v step 100 to 100 ma 100 ma 100 a v out (ac) 0 5 10 15 20 25 30 -1500 -1000 -500 0 500 1000 1500 0 500 1000 1500 2000 2500 output voltage (mv) time (s) v out = 2.5v step 1 ma to 200 ma 1 ma 200 ma v out (ac) 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 ground current (a) input voltage (v) v out = 2.5v i out = 10 ma 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 ground current (a) input voltage (v) v out = 5.0v i out = 10 ma 0 1 2 3 4 5 6 0 1 2 3 4 5 6 output voltage (v) input voltage (v) i out = 1 ma v out = 5v v out = 3.3v 0 2 4 6 8 10 0 1 2 3 4 5 6 dropout current (a) input voltage (v) i out = 1 ma v out = 5v v out = 3.3v
? 2012 microchip technology inc. ds25122a-page 11 mcp1703a 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . 3.1 ground terminal (gnd) regulator ground. tie gnd to the negative side of the output and the negative side of the input capacitor. only the ldo bias current (2.0 a typical) flows out of this pin; there is no high current. the ldo output regulation is referenced to this pin. minimize voltage drops between this pin and the negative side of the load. 3.2 regulated output voltage (v out ) connect v out to the positive side of the load and the positive terminal of the output capacitor. the positive side of the output capacitor should be physically located as close to the ldo v out pin as is practical. the current flowing out of this pin is equal to the dc load current. 3.3 unregulated input voltage (v in ) connect v in to the input unregulated source voltage. like all low dropout linear regulators, low source impedance is necessary for the stable operation of the ldo. the amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. for most applications, 1 f of capacitance will ensure stable operation of the ldo circuit. for applications that have load currents below 100 ma, the input capacitance requirement can be lowered. the type of capacitor used can be ceramic, tantalum, or aluminum electrolytic. the low esr characteristics of the ceramic will yield better noise and psrr performance at high-frequency. 3.4 exposed thermal pad (ep) there is an internal electrical connection between the exposed thermal pad (ep) and the v ss pin; they must be connected to the same potential on the printed circuit board (pcb). table 3-1: mcp1703a pin function table 2x3 dfn sot-223 sot-23a sot-89 name function 4 2,tab 1 1 gnd ground terminal 1323v out regulated voltage output 8132,tabv in unregulated supply voltage 2, 3, 5, 6, 7 ? ? ? nc no connection 9 ? ? ? ep exposed thermal pad (ep); must be connected to vss
mcp1703a ds25122a-page 12 ? 2012 microchip technology inc. 4.0 detailed description 4.1 output regulation a portion of the ldo output voltage is fed back to the internal error amplifier and compared with the precision internal band gap reference. the error amplifier output will adjust the amount of current that flows through the p-channel pass transistor, thus regulating the output voltage to the desired value. any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to figure 4-1 ). 4.2 overcurrent the mcp1703a internal circuitry monitors the amount of current flowing through the p-channel pass transis- tor. in the event of a short-circuit or excessive output current, the mcp1703a will turn off the p-channel device for a short period, after which the ldo will attempt to restart. if the excessive current remains, the cycle will repeat itself. 4.3 overtemperature the internal power dissipation within the ldo is a function of input-to-output voltage differential and load current. if the power dissipation within the ldo is excessive, the internal junction temperature will rise above the typical shutdown threshold of 150c. at that point, the ldo will shut down and begin to cool to the typical turn-on junction temperature of 130c. if the power dissipation is low enough, the device will continue to cool and operate normally. if the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the ldo, protecting it from catastrophic failure. figure 4-1: block diagram. + - v in v out gnd +v in error amplifier voltage reference overcurrent overtemperature mcp1703a
? 2012 microchip technology inc. ds25122a-page 13 mcp1703a 5.0 functional description the mcp1703a cmos low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. the operating continuous load range of the mcp1703a is from 0 ma to 250 ma (v r 2.5v). the input operating voltage range is from 2.7v to 16.0v, making it capable of operating from two or more alkaline cells or single and multiple li-ion cell batteries. 5.1 input the input of the mcp1703a is connected to the source of the p-channel pmos pass transistor. as with all ldo circuits, a relatively low source impedance (10 ) is needed to prevent the input impedance from causing the ldo to become unstable. the size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. for most applications (up to 100 ma), a 1 f ceramic capacitor will be sufficient to ensure circuit stability. larger values can be used to improve circuit ac performance. the capacitance of the input capacitor should be equal to or greater than the capacitance of the selected output capacitor to ensure energy is available to keep the output capacitor charged during dynamic load changes. 5.2 output the maximum rated continuous output current for the mcp1703a is 250 ma (v r 2.5v). for applications where v r < 2.5v, the maximum output current is 200 ma. a minimum output capacitance of 1.0 f is required for small signal stability in applications that have up to 250 ma output current capability. the capacitor type can be ceramic, tantalum, or aluminum electrolytic. the equivalent series resistance (esr) range on the output capacitor can range from 0 to 2.0 . the output capacitor range for ceramic capacitors is 1 f to 22 f. higher output capacitance values may be used for tantalum and electrolytic capacitors. higher output capacitor values pull the pole of the ldo transfer function inward that results in higher phase shifts which in turn cause a lower crossover frequency. the circuit designer should verify the stability by applying line step and load step testing to their system when using capacitance values greater than 22 f. 5.3 output rise time when powering up the internal reference output, the typical output rise time of 600 s is controlled to prevent overshoot of the output voltage.
mcp1703a ds25122a-page 14 ? 2012 microchip technology inc. 6.0 application circuits and issues 6.1 typical application the mcp1703a is most commonly used as a voltage regulator. its low quiescent current and low dropout voltage make it ideal for many battery-powered applications. figure 6-1: typical application circuit. 6.1.1 application input conditions 6.2 power calculations 6.2.1 power dissipation the internal power dissipation of the mcp1703a is a function of input voltage, output voltage and output current. the power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (2.0 a x v in ). the following equation can be used to calculate the internal power dissipation of the ldo. equation 6-1: the maximum continuous operating junction temperature specified for the mcp1703a is +125c . to estimate the internal junction temperature of the mcp1703a, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (r ja ). the thermal resistance from junction to ambient for the sot-23a pin package is estimated at 336c/w. equation 6-2: the maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. the following equation can be used to determine the package maximum internal power dissipation. equation 6-3: equation 6-4: equation 6-5: package type = sot-23a input voltage range = 2.7v to 4.8v v in maximum = 4.8v v out typical = 1.8v i out = 50 ma maximum gnd v out v in c in 1f ceramic c out 1f ceramic v out v in 2.7v to 4.8v 1.8v i out 50 ma mcp1703a p ldo v in max () v out min () ? () i out max () = where: p ldo = ldo pass device internal power dissipation v in(max) = maximum input voltage v out(min) = ldo minimum output voltage t jmax () p total r ja t amax + = where: t j(max) = maximum continuous junction temperature p total = total device power dissipation r ja = thermal resistance from junction-to-ambient t amax = maximum ambient temperature p dmax () t jmax () t amax () ? () r ja --------------------------------------------------- = where: p d(max) = maximum device power dissipation t j(max) = maximum continuous junction temperature t a(max) = maximum ambient temperature r ja = thermal resistance from junction-to-ambient t jrise () p dmax () r ja = where: t j(rise) = rise in device junction temperature over the ambient temperature p total = maximum device power dissipation r ja = thermal resistance from junction to ambient t j t jrise () t a + = where: t j = junction temperature t j(rise) = rise in device junction temperature over the ambient temperature t a = ambient temperature
? 2012 microchip technology inc. ds25122a-page 15 mcp1703a 6.3 voltage regulator internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. the power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 power dissipation example device junction temperature rise the internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. the thermal resistance from junction to ambient (r ja ) is derived from an eia/jedec standard for measuring thermal resistance for small surface mount packages. the eia/jedec specification is jesd51-7, ?high effective thermal conductivity test board for leaded surface mount packages?. the standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. the actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. refer to an792, ?a method to determine how much power a sot23 can dissipate in an application? (ds00792), for more information regarding this subject. junction temperature estimate to estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. for this example, the worst-case junction temperature is estimated below. maximum package power dissipation at +40c ambient temperature assuming minimal copper usage. 6.4 voltage reference the mcp1703a can be used not only as a regulator, but also as a low quiescent current voltage reference. in many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. when the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the mcp1703a ldo. the low-cost, low quiescent current and small ceramic output capacitor are all advantages when using the mcp1703a as a voltage reference. figure 6-2: using the mcp1703a as a voltage reference. package package type: sot-23a input voltage: v in = 2.7v to 4.8v ldo output voltages and currents v out = 1.8v i out =50ma maximum ambient temperature t a(max) = +40c internal power dissipation internal power dissipation is the product of the ldo output current times the voltage across the ldo (v in to v out ). p ldo(max) =(v in(max) - v out(min) ) x i out(max) p ldo = (4.8v - (0.97 x 1.8v)) x 50 ma p ldo = 152.7 milli-watts t j(rise) =p total x r ja t jrise = 152.7 milli-watts x 336.0c/watt t jrise = 51.3c t j =t jrise + t a(max) t j =91.3c sot-23a (336.0c/watt = r ja ) p d(max) = (+125c - 40c) / 336c/w p d(max) = 253 milli-watts sot-89 (153.3c/watt = r ja ) p d(max) = (+125c - 40c) / 153.3c/w p d(max) = 0.554 watts sot-223 (62.9c/watt = r ja ) p d(max) = (+125c - 40c) / 62.9c/w p d(max) = 1.35 watts pic ? gnd v in c in 1f c out 1f bridge sensor v out v ref ado ad1 ratio metric reference 2 a bias microcontroller mcp1703a
mcp1703a ds25122a-page 16 ? 2012 microchip technology inc. 6.5 pulsed load applications for some applications, there are pulsed load current events that may exceed the specified 250 ma maximum specification of the mcp1703a. the internal current limit of the mcp1703a will prevent high peak load demands from causing non-recoverable damage. the 250 ma rating is a maximum average continuous rating. as long as the average current does not exceed 250 ma, pulsed higher load currents can be applied to the mcp1703a . the typical current limit for the mcp1703a is 500 ma (t a = +25c).
? 2012 microchip technology inc. ds25122a-page 17 mcp1703a 7.0 packaging information 7.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 3-pin sot-23a example: 3-lead sot-89 example: jg25 standard options for sot-23a symbol voltage* symbol voltage* jgnn 1.2 jjnn 3.0 jmnn 1.5 jknn 3.3 jfnn 1.8 jpnn 4.0 jhnn 2.5 jlnn 5.0 jnnn 2.8 ? ? * custom output voltages available upon request. contact your local microchip sales offi ce for more information. standard options for sot-89 symbol voltage* symbol voltage* pa 1.2 pc 3.0 pf 1.5 pd 3.3 mz 1.8 ph 4.0 pb 2.5 pe 5.0 pg 2.8 ? ? * custom output voltages available upon request. contact your local microchip sales office for more information. pa1211 256 3-lead sot-223 example: standard options for sot-223 symbol voltage* symbol voltage* 12 1.2 30 3.0 15 1.5 33 3.3 18 1.8 40 4.0 25 2.5 50 5.0 28 2.8 ? ? custom 33 3.3 ? ? * custom output voltages available upon request. contact your local microchip sales office for more information. 1703a 12e1211 256 alq 211 25 8-lead dfn (2 x 3) example: standard options for 8-lead dfn (2 x 3) symbol voltage* symbol voltage* alq 1.2 alv 3.0 alr 1.5 alw 3.3 als1.8alx4.0 alt 2.5 aly 5.0 alu 2.8 ? ? * custom output voltages available upon request. contact your local microchip sales office for more information.
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? 2012 microchip technology inc. ds25122a-page 19 mcp1703a note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
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? 2012 microchip technology inc. ds25122a-page 21 mcp1703a note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
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? 2012 microchip technology inc. ds25122a-page 25 mcp1703a note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp1703a ds25122a-page 26 ? 2012 microchip technology inc. notes:
? 2012 microchip technology inc. ds25122a-page 27 mcp1703a appendix a: revision history revision a (march 2012) ? original release of this document.
? 2012 microchip technology inc. ds25122a-page 28 mcp1703a product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . device: mcp1703a: 250 ma, 16v low quiescent current ldo tape and reel: t = tape and reel output voltage*: 12 = 1.2v ?standard? 15 = 1.5v ?standard? 18 = 1.8v ?standard? 25 = 2.5v ?standard? 28 = 2.8v ?standard? 30 = 3.0v ?standard? 33 = 3.3v ?standard? 40 = 4.0v ?standard? 50 = 5.0v ?standard? *contact factory for other output voltage options. extra feature code: 0=fixed tolerance: 1 = 1.0% (custom) 2 = 2.0% (standard) temperature: e= -40 c to +125 c (extended) package type: cb = plastic small outline transistor (sot-23a), 3-lead db = plastic small outline transistor (sot-223), 3-lead mb = plastic small outline transistor (sot-89), 3-lead mc = plastic dual flat, no lead package (dfn) - 2x3x0.9mm, 8-lead. part no. x xx output feature code device voltage x tolerance x/ tem p. xx package x- tape and reel examples: a) mcp1703at-1202e/xx: tape and reel, 1.2v low quiescent ldo, extended temperature b) mcp1703at-1502e/xx: tape and reel, 1.5v low quiescent ldo, extended temperature c) mcp1703at-1802e/xx: tape and reel, 1.8v low quiescent ldo, extended temperature d) mcp1703at-2502e/xx: tape and reel, 2.5v low quiescent ldo, extended temperature e) mcp1703at-2802e/xx: tape and reel, 2.8v low quiescent ldo, extended temperature f) mcp1703at-3002e/xx: tape and reel, 3.0v low quiescent ldo, extended temperature g) mcp1703at-3302e/xx: tape and reel, 3.3v low quiescent ldo, extended temperature h) mcp1703at-4002e/xx: tape and reel, 4.0v low quiescent ldo, extended temperature i) mcp1703at-5002e/xx: tape and reel, 5.0v low quiescent ldo, extended temperature xx = cb for 3ld sot-23a package = db for 3ld sot-223 package = mb for 3ld sot-89 package = mc for 8ld dfn package.
? 2012 microchip technology inc. ds25122a-page 29 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mxdev, mxlab, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, app lication maestro, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, total endurance, tsharc, uniwindriver, wiperlock and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-62076-139-7 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management system certified by dnv == iso/ts 16949 ==
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